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ICPL-155E
The ICPL-155E consists of a GaAIAs infrared light-emitting diodes and integrated high gain, high-speed photodetectors. The ICPL-155E is housed in the SOP5 package. The photodetector has an internal Faraday shield that provides a guaranteed Common-mode transient immunity of ±20 kV/us. ICPL-155E is suitable for direct gate driving circuit for IGBTs or power MOSFETs.
ICPL-3120
The ICPL-3120 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to an integrated circuit with a power output stage in a plastic DIP8 package with different lead forming options.
ICPL-314X
The ICPL-314 series Photocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications and inverters in power supply system. It contains an LED optically coupled to an integrated circuit with a power output stage.
The Photocoupler operational parameters are guaranteed over the temperature range from -40°C ~ +110°C.
ICPL-33XJ
The ICPL-33XJ contains a AlGaAs LED. The LED is optically coupled to an integrated circuit with a power output stage.
ICPL-341X
The ICPL-341 series Photocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications and inverters in power supply system. It contains an LED optically coupled to an integrated circuit with a power output stage.
The 3.0A peak output current is capable of directly driving most IGBTs with ratings up to 1200 V/200 A. For IGBTs with higher ratings, the ICPL-341 series can be used to drive a discrete power stage which drives the IGBT gate.
The Photocoupler operational parameters are guaranteed over the temperature range from -40°C ~ +110°C.
ICPL-343X
The ICPL-343 series Photocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications and inverters in power supply system. It contains an LED optically coupled to an integrated circuit with a power output stage.
The 5.0A peak output current is capable of directly driving most IGBTs with ratings up to 1200 V/200 A. For IGBTs with higher ratings, the ICPL-343 series can be used to drive a discrete power stage which drives the IGBT gate.
The Photocoupler operational parameters are guaranteed over the temperature range from -40°C ~ +110°C.
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安芯微半导体(ISOMICRON)源于2016年在中国成立的芯片方案公司，核心成员来自于华为海思和国内著名771研究所，芯片设计方案公司专注于光电隔离器件及半导体光电材料等方面的研发和设计，为欧系和台系光耦品牌提供设计方案及其技术服务，由其设计的产品已广泛应用于工控、机器人、医疗、新能源、轨道交通、智能家电等行业，产品遍及世界各地。
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