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6N139_138
The 6N138 and 6N139 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon high speed photo darlington transistor in a plastic DIP8 package with different lead forming options.
A separate design between photodiode and darlington transistor reduces the base-collector capacitance of the input transistor which improves the speed by several orders of magnitude over conventional phototransistor optocouplers.


ICPL-815
The ICPL-815 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar darlington phototransistor detector in a plastic DIP4 package with different lead forming options.
With the robust coplanar double mold structure, ICPL-815 series provide the most stable isolation feature.


ICPL-852
The ICPL-852 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar darlington phototransistor detector in a plastic DIP4 package with different lead forming options.
With the robust coplanar double mold structure, ICPL-852 series provide the most stable isolation feature.


IS352
The IS352 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar high voltage darlington phototransistor detector in a plastic SOP4 package.
With the robust coplanar double mold structure, IS352 series provide the most stable isolation feature.


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