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4N32, 4N33
The 4N32, 4N33 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar darlington phototransistor detector in a plastic DIP6 package with different lead forming options.


4NXX
The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.


6N136_135
The 6N135, 6N136 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon high speed photo transistor in a plastic DIP8 package with different lead forming options.
A separate design between photodiode and transistor reduces the base collector capacitance of the input transistor which improves the speed by several orders of magnitude over conventional phototransistor optocouplers.


6N137
The 6N137 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon high speed integrated photo-detector logic gate with a strobable output in a plastic DIP8 package with different lead forming options.


6N139_138
The 6N138 and 6N139 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon high speed photo darlington transistor in a plastic DIP8 package with different lead forming options.
A separate design between photodiode and darlington transistor reduces the base-collector capacitance of the input transistor which improves the speed by several orders of magnitude over conventional phototransistor optocouplers.


CNY17-X, CNY17F-X
The CNY17-X, CNY17F-X series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.


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